type ipd170n04n g opti mos ? 3 power-transistor features ? fast switching mosfet for smps ? optimized technology for dc/dc converters ? qualified according to jedec 1) for target applications ? n-channel, normal level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 100% avalanche tested ? pb-free plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d v gs =10 v, t c =25 c 30 a v gs =10 v, t c =100 c 23 pulsed drain current 2) i d,pulse t c =25 c 210 avalanche current, single pulse 3) i as t c =25 c 30 avalanche energy, single pulse e as i d =30 a, r gs =25 ? 5mj gate source voltage v gs 20 v value 1) j-std20 and jesd22 v ds 40 v r ds(on),max 17 m ? i d 30 a product summary type ipd170n04n g package pg-to252-3 marking 170n04n rev. 1.0 page 1 2007-12-11
ipd170n04n g maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit power dissipation p tot t c =25 c 31 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 4.9 k/w smd version, device on pcb r thja minimal footprint - - 75 6 cm2 cooling area 4) --50 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 40 - - v gate threshold voltage v gs(th) v ds = v gs , i d =10 a 2-4 zero gate voltage drain current i dss v ds =40 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =40 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =30 a - 14.2 17 m ? gate resistance r g - 1.2 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =30 a 14 28 - s 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. 3) see figure 13 for more detailed information value values 2) see figure 3 for more detailed information rev. 1.0 page 2 2007-12-11
ipd170n04n g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 660 880 pf output capacitance c oss - 230 310 reverse transfer capacitance c rss - 7.0 - turn-on delay time t d(on) - 5.7 - ns rise time t r - 1.0 - turn-off delay time t d(off) - 7.0 - fall time t f - 2.2 - gate char g e characteristics 5) gate to source charge q gs - 4.1 - nc gate to drain charge q gd - 1.1 - switching charge q sw - 3.3 - gate charge total q g - 8.2 11 gate plateau voltage v plateau - 6.2 - v gate charge total, sync. fet q g(sync) v ds =0.1 v, v gs =0 to 10 v - 7.8 - nc output charge q oss v dd =20 v, v gs =0 v - 8.4 - reverse diode diode continuous forward current i s - - 26 a diode pulse current i s,pulse - - 210 diode forward voltage v sd v gs =0 v, i f =30 a, t j =25 c - 1 1.2 v reverse recovery charge q rr v r =20 v, i f = i s , d i f /d t =400 a/s -30-nc 5) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =20 v, f =1 mhz v dd =20 v, v gs =10 v, i d =30 a, r g =1.6 ? v dd =20 v, i d =30 a, v gs =0 to 10 v rev. 1.0 page 3 2007-12-11
ipd170n04n g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 0.01 0.1 1 10 0000001 t p [s] z thjc [k/w] 0 5 10 15 20 25 30 35 0 50 100 150 200 t c [c] p tot [w] 0 5 10 15 20 25 30 35 0 50 100 150 200 t c [c] i d [a] rev. 1.0 page 4 2007-12-11
ipd170n04n g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 5.5 v 6 v 6.5 v 7 v 10 v 0 5 10 15 20 25 30 35 40 0 10203040 i d [a] r ds(on) [m ? ] 25 c 175 c 0 10 20 30 40 50 60 70 02468 v gs [v] i d [a] 0 5 10 15 20 25 30 35 40 0204060 i d [a] g fs [s] 5 v 5.5 v 6 v 6.5 v 7 v 10 v 0 10 20 30 40 50 60 70 0123 v ds [v] i d [a] rev. 1.0 page 5 2007-12-11
ipd170n04n g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; i d =250 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 4 8 12 16 20 24 28 32 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 10 0 0 10203040 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 v sd [v] i f [a] rev. 1.0 page 6 2007-12-11
ipd170n04n g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =30 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 25 30 35 40 45 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 10 3 10 2 10 1 10 0 10 -1 1 10 100 t av [s] i av [a] 8 v 20 v 32 v 0 2 4 6 8 10 12 0246810 q gate [nc] v gs [v] rev. 1.0 page 7 2007-12-11
ipd170n04n g package outline pg-to252-3 footprint: packaging: rev. 1.0 page 8 2007-12-11
ipd170n04n g published by infineon technologies ag 81726 munich, germany ? 2007 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.0 page 9 2007-12-11
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